Open Access
Table 1
Deposition parameters and fitted structural properties of periodic multilayers for XRR. Uncertainties on fitted values are obtained from the sensitivity analysis of XRR fits at multiple energies.
| Sample ID | W-DC-31 | W-DC-25 | WRe-DC-46 | WRe-HP-26 |
|---|---|---|---|---|
| Multilayer structure | ||||
| Absorber material | W | W | WRe | WRe |
| Absorber deposition mode | dcMS | dcMS | dcMS | HiPIMS |
| Spacer material | SiC | SiC | SiC | SiC |
| Spacer deposition mode | rfMS | rfMS | rfMS | rfMS |
| Deposition parameters | ||||
| Absorber: avg. power (W) | 40 | 40 | 40 | 60 |
| Absorber: avg. voltage (V) | 262 | 262 | 322 | 710 |
| Absorber: peak current (A) | – | – | – | 14 |
| Absorber: pulse frequency (Hz) | – | – | – | 1000 |
| Absorber: pulse duration (μs) | – | – | – | 30 |
| Spacer: rf power (W) | 200 | 200 | 200 | 200 |
| Fitted structural parameters | ||||
| Period d (nm) | 3.65 ± 0.01 | 3.28 ± 0.01 | 3.50 ± 0.01 | 3.34 ± 0.01 |
| Stacking ratio Γ | 0.47 ± 0.05 | 0.45 ± 0.05 | 0.41 ± 0.05 | 0.43 ± 0.05 |
| ρ SiC (g cm−3) | 4.1 ± 0.5 | 4.5 ± 0.5 | 3.4 ± 0.5 | 3.3 ± 0.5 |
| ρabs (g cm−3) | 15.1 ± 0.5 | 15.3 ± 0.5 | 16.7 ± 0.5 | 17.1 ± 0.5 |
| σabs/SiC (nm)** | 0.19 ± 0.05 | 0.33 ± 0.05 | 0.30 ± 0.05 | 0.35 ± 0.05 |
| σSiC/abs (nm) | 0.22 ± 0.05 | 0.38 ± 0.05 | 0.23 ± 0.05 | 0.26 ± 0.05 |
**
Roughness for absorber on SiC interface.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.