EOSAM 2025
Open Access

Table 2

Compared HfO2 thins films prepared by PEALD with different ALD tools.

HfO2 – Type A HfO2 – Type B
reference this work; [29] [33]
PEALD tool OpAL SILAYO-ICP330
precursors TDMAH + O2 plasma TDMAH + O2 plasma
substrate temperature 100 °C 100 °C
density 7.90 gcm-3 8.25 gcm-3
surface roughness 0.8 nm (XRR) 1.07 nm (AFM)

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