| Issue |
J. Eur. Opt. Soc.-Rapid Publ.
Volume 17, Number 1, 2021
EOS Annual Meeting (EOSAM) 2020
|
|
|---|---|---|
| Article Number | 3 | |
| Number of page(s) | 8 | |
| DOI | https://doi.org/10.1186/s41476-021-00147-w | |
| Published online | 06 March 2021 | |
Research
Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold
1
RhySearch, Werdenbergstrasse 4, CH9471, Buchs, SG, Switzerland
2
Center for X-ray Analytics, Empa, Überlandstrasse 129, CH8600, Dübendorf, Switzerland
Received:
21
December
2020
Accepted:
21
February
2021
In this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.
Key words: Hafnia / Grain growth / Crystallization / Thin films / X-ray diffraction / Laser-induced damage threshold
© The Author(s) 2021
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