| Issue |
J. Eur. Opt. Soc.-Rapid Publ.
Volume 6, 2011
|
|
|---|---|---|
| Article Number | 11014s | |
| Number of page(s) | 5 | |
| DOI | https://doi.org/10.2971/jeos.2011.11014s | |
| Published online | 18 April 2011 | |
Regular papers
Enhancement of Photodetector Responsivity in Standard SOI CMOS Processes by introducing Resonant Grating Structures
University of Heidelberg, 68131 Mannheim, Germany
* max.auer@ziti.uni-heidelberg.de
Received:
3
May
2010
A new photodetector concept is described, which is fully compatible with the standard SOI CMOS process and does not require any post-processing steps. Our simulations are based on two-dimensional RCWA (Rigorous Coupled Wave Analysis) and local absorption theory (K.-H. Brenner, “Aspects for calculating local absorption with the rigorous coupled-wave method” Optics Express 2010, Vol. 18, Iss. 10, pp. 10369-10376, (2010)). The simulations show that optimized lateral grating structures are able to enhance the absorption efficiency of thin semi-conductor detectors by a factor of 32 compared to non-enhanced approaches.
Key words: local absorption / RCWA / photodetector design
© The Author(s) 2011. All rights reserved.
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