Figure 5
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(a) Schematic illustration of the quantitative analysis procedure for HAADF-STEM images. Interface positions are determined by fitting the profile with the error function at each interface. (b) HAADF-STEM image and intensity profile for sample TEM-73, comparing WRe/SiC (top stack) and W/SiC (bottom stack), both deposited by dcMS. (c) HAADF-STEM image and intensity profile for sample TEM-65, comparing WRe/SiC deposited by dcMS (top) and HiPIMS (bottom). Brighter layers correspond to absorbers (W or WRe), darker layers to SiC spacers.
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