a) Schematic illustration of the two beams emitted from the GC, corresponding to orthogonal TE and TM polarizations. b) Top-view optical microscope image of the fabricated Si₃N₄/SiO₂ GC. (c, e) Simulated far-field intensity distributions as a function of emission angle, evaluated in a plane 100 μm above the chip surface, for TE and TM polarizations, respectively. (d, f) Experimental intensity maps acquired from 25 μm to 150 μm above the chip surface were fitted to reconstruct the emission profiles of the GC for TE and TM polarizations, respectively.