Open Access
Table 1
Physical models used in SILVACO ATLAS simulation for nBn InGaAs photodetector design.
| Model | Syntax | Description |
|---|---|---|
| Mobility | CVT | To enable transverse field, doping, and temperature-dependent parts of mobility |
| Optical | OPTR | To enable band-to-band recombination for direct band semiconductors |
| Shockley–Read–Hall | SRH | To enable recombination. It uses fixed minority carrier lifetimes |
| AUGER recombination | Auger | To enable direct transition of three carriers |
| Fermi distribution | Fermi | To enable carrier statistics. Suitable for highly doped regions |
| Quantum tunneling | QTUNN | To enable quantum tunneling through the conduction and valence band barrier due to a semiconductor |
| Quantum tunneling Band to Band | QTUN.BBT | To enables the band-to-band mode of the direct quantum tunneling model |
| Non-local trap assisted tunneling | TAT.NONLOCAL | To enables the non-local tunneling model in the calculation of the field effect enhancement factors. |
| Impact ionization | IMPACT SELB | To enables the impact ionization. Recommended for most case, includes temperature dependent parameters. |
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