| Issue |
J. Eur. Opt. Soc.-Rapid Publ.
Volume 9, 2014
|
|
|---|---|---|
| Article Number | 14022 | |
| Number of page(s) | 6 | |
| DOI | https://doi.org/10.2971/jeos.2014.14022 | |
| Published online | 11 June 2014 | |
Regular papers
Radiometric and noise characteristics of InAs-rich T2SL MWIR pin photodiodes
1
ONERA/DOTA, Chemin de la Hunière, 91761 Palaiseau Cedex, France
2
Institut d’Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2, Place Eugne Bataillon, 34095 Montpellier Cedex 5, France
a edouard.giard@onera.fr
b rachid.taalat@ies.univ-montp2.fr
c marie.delmas@ies.univ-montp2.fr
d rodriguez@ies.univ-montp2.fr
e philippe.christol@ies.univ-montp2.fr
f isabelle.ribet@onera.fr
Received:
12
March
2014
Revised:
22
May
2014
We present a full characterization of the radiometric performances of a type-II InAs/GaSb superlattice pin photodiode operating in the mid-wavelength infrared domain. We first focused our attention on quantum efficiency, responsivity and angular response measurements: quantum efficiency reaches 23% at λ = 2.1 µm for 1 µm thick structure. Noise under illumination measurements are also reported: noise is limited by the Schottky contribution for reverse bias voltage smaller than 1.2 V. The specific detectivity, estimated for 2π field-of-view and 333 K background temperature, was determined equal to 2.29 × 1010 Jones for -0,8 V bias voltage and 77 K operating temperature.
Key words: Type-II superlattice / photodiode / midwave infrared / quantum efficiency / noise
© The Author(s) 2014. All rights reserved.
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