Issue |
J. Eur. Opt. Society-Rapid Publ.
Volume 19, Number 1, 2023
EOSAM 2022
|
|
---|---|---|
Article Number | 23 | |
Number of page(s) | 8 | |
DOI | https://doi.org/10.1051/jeos/2023018 | |
Published online | 28 April 2023 |
Research Article
Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers
Bundesanstalt für Materialforschung und -prüfung (BAM), Division 6.1 Surface Analysis and Interfacial Chemistry, Unter den Eichen 44–46, D-12203 Berlin, Germany
* Corresponding author: elena.ermilova@bam.de
Received:
31
January
2023
Accepted:
5
April
2023
Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control.
Key words: Imaging ellipsometry / White light interference microscopy / 4H–SiC / Defects
© The Author(s), published by EDP Sciences, 2023
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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