J. Eur. Opt. Soc.-Rapid Publ.
Volume 13, Number 1, 2017
|Number of page(s)||8|
|Published online||01 May 2017|
Plasmonic behavior of III-V semiconductors in far-infrared and terahertz range
Nanotechnology Centre, VSB – Technical University of Ostrava, 17. listopadu 15/2172, 708 33, Ostrava, Poruba, Czech Republic
2 Department of Electrical and Computer Engineering, Dalhousie University, 6299 South St, NS B3H 4R2, Halifax, Canada
3 Department of Physics, VSB – Technical University of Ostrava, 17. listopadu 15/2172, 708 33, Ostrava, Poruba, Czech Republic
4 Institut d’Electronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, F-59652, Villeneuve d’Ascq cedex, France
Accepted: 21 April 2017
Background: In this article, III-V semiconductors are proposed as materials for far-infrared and terahertz plasmonic applications. We suggest criteria to estimate appropriate spectral range for each material including tuning by fine doping and magnetic field.
Methods: Several single-crystal wafer samples (n,p-doped GaAs, n-doped InP, and n,p-doped and undoped InSb) are characterized using reflectivity measurement and their optical properties are described using the Drude-Lorentz model, including magneto-optical anisotropy.
Results: The optical parameters of III-V semiconductors are presented. Moreover, strong magnetic modulation of permittivity was demonstrated on the undoped InSb crystal wafer in the terahertz spectral range. Description of this effect is presented and the obtained parameters are compared with a Hall effect measurement.
Conclusion: Analyzing the phonon/free carrier contribution to the permittivity of the samples shows their possible use as plasmonic materials; the surface plasmon properties of semiconductors in the THz range resemble those of noble metals in the visible and near infrared range and their properties are tunable by either doping or magnetic field.
Key words: Surface plasmons / Semiconductor materials / Magneto-optical materials / THz-TDS / FTIR
© The Author(s) 2017
Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License(http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
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