Issue |
J. Eur. Opt. Soc.-Rapid Publ.
Volume 12, Number 1, 2016
|
|
---|---|---|
Article Number | 26 | |
Number of page(s) | 5 | |
DOI | https://doi.org/10.1186/s41476-016-0022-8 | |
Published online | 13 December 2016 |
Research
Competition between sub-bandgap linear detection and degenerate two-photon absorption in gallium arsenide photodiodes
1
Laboratoire Charles Fabry, 2 Avenue Augustin Fresnel, 91127, Palaiseau, France
2
ONERA, Chemin de la Hunière, 91761, Palaiseau Cedex, France
Received:
10
May
2016
Accepted:
21
October
2016
This letter is on the response of gallium arsenide p-i-n diodes to sub-bandgap photons (1.55 μm). We investigate the various regimes of sub-bandgap operation by using different light sources delivering pulses ranging from nanosecond to microsecond durations. We evidence two regimes : a regime of degenerate two-photon absorption, with a clear quadratic dependence with respect to the incident flux, and a sub-bandgap, temperature dependant linear regime, that drives photocurrent generation at lower power densities. Both processes are associated to a very low quantum efficiency, around 10–8. We then determine absorption coefficients as well as trap densities, thanks to a model involving a photo-assisted Shockley Read Hall effect.
Key words: Gallium arsenide / Two-photon absorption / Non-linear optics / Detection / Defects
© The Author(s) 2016
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