Issue |
J. Eur. Opt. Soc.-Rapid Publ.
Volume 5, 2010
|
|
---|---|---|
Article Number | 10049s | |
Number of page(s) | 4 | |
DOI | https://doi.org/10.2971/jeos.2010.10049s | |
Published online | 23 September 2010 |
Regular papers
(lnP)5/(Ga0.47In0.53As)5 superlattice confined 1.5 µm multiquantum well laser grown by all-solid source atomic layer molecular beam epitaxy.
1
IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid, Spain
2
Universidad de Castilla-La Mancha, Campus Universitario, S/N E16071, Cuenca, Spain
a marisa@imm.cnm.csic.es
b Pedro.Huertas@uclm.es
c aitor@imm.cnm.csic.es
d lola.golmayo@icmm.csic.es
e briones@imm.cnm.csic.es
Received:
25
May
2010
Room temperature laser emission near 1.55 µm is obtained in compressive strained multiquantum well separate confinement heterostructure grown at 340°C by solid source Atomic Layer Molecular Beam Epitaxy, where (lnP)5/(Ga0.47In0.53As)5, lattice-matched short period superlattices have been used as pseudoquaternary barrier to confine Ga0.27In0.73As wells. These preliminary results show that solid source Atomic Layer Molecular Beam Epitaxy is well adapted to fabricate advanced optoelectronic components including pseudoquaternary material.
Key words: ultra short light pulses / mode locking / intensity correlation / nonlinear optics
© The Author(s) 2010. All rights reserved.
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