| Issue |
J. Eur. Opt. Soc.-Rapid Publ.
Volume 5, 2010
|
|
|---|---|---|
| Article Number | 10040s | |
| Number of page(s) | 8 | |
| DOI | https://doi.org/10.2971/jeos.2010.10040s | |
| Published online | 01 September 2010 | |
Regular papers
Electro-optical modulating multistack device based on the CMOS-compatible technology of amorphous silicon
Department of Information Science, Mathematics, Electronics and Transportations (DIMET) “Mediterranea” University, Via Graziella Località Feo di Vito, 89131 Reggio Calabria, Italy
Received:
14
January
2010
In this paper we report results on a field-effect induced light modulation at λ = 1.55 µm in a high-index-contrast waveguide based on a multisilicon-on-insulator (MSOI) platform. The device is realized with the hydrogenated amorphous silicon (α-Si:H) technology and it is suitable for monolithic integration in a CMOS Integrated Circuit. The device exploits the free carrier optical absorption electrically induced in the semiconductor core waveguide. The dynamic behaviour of the device was experimentally and theoretically analyzed in presence of a visible illumination showing a link between the photogeneration and the free carriers provided by doped α-Si:H layers. The core waveguide contains several thin dielectric films of amorphous silicon carbonitride (α-SiCN) embedded along its thickness highly enhancing the absorbing action of the modulator held in the on-state.
Key words: amorphous materials / CMOS integrated circuits / electrooptic modulation / waveguides
© The Author(s) 2010. All rights reserved.
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