| Issue |
J. Eur. Opt. Soc.-Rapid Publ.
Volume 5, 2010
|
|
|---|---|---|
| Article Number | 10002 | |
| Number of page(s) | 5 | |
| DOI | https://doi.org/10.2971/jeos.2010.10002 | |
| Published online | 17 January 2010 | |
Regular papers
Electro-optically induced absorption in α-Si:H/α-SiCN waveguiding multistacks
1
Department of Information Science, Mathematics, Electronics and Transportations (DIMET) “Mediterranea” University, Via Graziella Località Feo di Vito, Reggio Calabria, 89060, Italy
2
Institute for Microelectronics and Microsystems, Consiglio Nazionale delle Ricerche - Unit of Bologna, Via Gobetti 101, Bologna, 40129, Italy
Received:
1
December
2009
Electro optical absorption in hydrogenated amorphous silicon (α-Si:H)-amorphous silicon carbonitride (α-SiCxNy) multilayers have been studied in three different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at λ = 1.55 µm through the application of an electric field which induces free carrier accumulation across the multiple insulator/semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations.
Key words: amorphous silicon / integrated optics / silicon opto-electronics / electro-optics / free carrier absorption / waveguides
© The Author(s) 2010. All rights reserved.
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