Issue |
J. Eur. Opt. Soc.-Rapid Publ.
Volume 4, 2009
|
|
---|---|---|
Article Number | 09006 | |
Number of page(s) | 7 | |
DOI | https://doi.org/10.2971/jeos.2009.09006 | |
Published online | 25 February 2009 |
Regular papers
Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field
1
CNR - Istituto di Fotonica e Nanotecnologie, Via Cineto Romano 42, 00156 Rome, Italy
2
ENEA - Centro Ricerche Frascati, 00044 Frascati, Italy
3
Selex Sistemi Integrati, Via Tiburtina Km 12.400, 00131 Rome, Italy
Received:
26
November
2008
We used AlGaN/GaN high electron mobility transistors as room-temperature direct detectors of radiation at 0.15 THz from a free electron laser, hence 5 times higher than their cutoff frequency of 30 GHz. By near-field active mapping we investigated the antenna-like coupling of the radiation to the transistor channel. We formulate a model for the detection based on self-mixing in the transistor channel. The noise equivalent power is found in the range of 10−7 W/Hz0.5 without any optimization of the device responsivity. Present day AlGaN/GaN fabrication technology may provide operation at higher frequency, integration of amplifiers for improved responsivity and fast switches for multiplexing, which make the detector here described the basic element of a monolithic terahertz focal plane array.
Key words: terahertz / heterostructure / detector / near-field
© The Author(s) 2009. All rights reserved.
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