Regular papers

Nano-meter scale heterogeneous III-V semiconductor-silicon photonic integration

Institut des Nanotechnologies de Lyon (INL), UMR 5270 CNRS-ECL-INSA-UCBL, Ecole Centrale de LYON, 36, Avenue Guy de Collongue, F-69134 Ecully Cedex

^* Pierre.Viktorovitch@ec-lyon.fr

Received: 27 July 2008

Abstract

It is pointed out that the fully recognised and ever growing need for a combination of photonic and electronic functionalities could be made fully effective by the heterogeneous integration of active III-V semiconductor/passive silicon photonics and silicon microelectronics. It is shown that the inevitable scaling down to nano-meter range of photonic integration requested by the necessary matching to microelectronics is made possible by the heterogeneous association of III-V semiconductor and silicon membranes including high index contrast and nanometer scale structuring. It is emphasized that these membrane photonic nanostructures can be considered as the absolute must on the track to the ultimate confinement of photons which is highly desired in the prospect of the development of micro-nano-photonic devices and systems. Examples of devices and systems along this approach are presented (micro-laser/micro-guide integration, active devices with very low threshold etc.).