| Issue |
J. Eur. Opt. Soc.-Rapid Publ.
Volume 3, 2008
|
|
|---|---|---|
| Article Number | 08023 | |
| Number of page(s) | 3 | |
| DOI | https://doi.org/10.2971/jeos.2008.08023 | |
| Published online | 30 July 2008 | |
Regular papers
Bose-Einstein condensation in semiconductors: myth or reality?
1
CEA-CNRS-UJF joint group “Nanophysique et Semiconducteurs”, Institut Néel, CNRS-UJF, 38042 Grenoble, France
2
Ecole Polytechnique Fdrale de Lausanne (EPFL), Station 3, CH-1015 Lausanne, Switzerland
a kasprzakj@Cardiff.ac.uk
b maxime.richard@grenoble.cnrs.fr
c regis.andre@grenoble.cnrs.fr
d lesidang@grenoble.cnrs.fr
Received:
28
July
2008
Bose-Einstein condensation, predicted for a gas of non interacting bosons in 1924 by Einstein, has been demonstrated for the first time in 1995 in a dilute gas of rubidium atoms at temperatures below 10−6 K. In this work, it is shown that Bose-Einstein condensation can be achieved at around 15 − 20 K in a solid state system by using microcavity polaritons, which are composite bosons of mass ten billion times lighter than that of rubidium atoms.
Key words: Bose-Einstein condensation / microcavity polaritons / excitons
© The Author(s) 2008. All rights reserved.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.