Table 4
Performance comparison between the proposed work and relevant devices.
| Reference | Result type | Platform | Bandwidth [GHz] | Vπ · L [V cm] | Area [mm2] | Frequency doubling |
|---|---|---|---|---|---|---|
| [10] | Experiment | Si | 67 | 3 | N/A | N/A |
| [11] | Experiment | Si | 110 | 6.8 | N/A | N/A |
| [13] | Experiment | TFLN | >70 | 2.2 | 10 | Supported |
| [15] | Simulation | TFLN | 60 | 1.8 | 2 | Supported |
| [16] | Experiment | TFLN | 67 | 1.8 | 15 | N/A |
| [25] | Simulation | SiC-LN | >65 | 3.5 | 4.8 | Supported |
| [38] | Simulation | Si3N4-LN | >50 | 6.0 | 5.2 | N/A |
| This work | Simulation | Si3N4-TFLN | 72 | 2.8 | 3.648 | Supported |
Note: This table clarifies the result type (simulation/experiment) of each reference device. The quantitative comparison of this work (Si3N4-TFLN, simulation) is limited to other simulation-based multifunctional integrated devices [15, 25, 38], focusing on verifying the advantages of the proposed scheme in bandwidth-voltage balance and miniaturization. Experimental results are included for qualitative reference to reflect the state-of-the-art performance of similar devices.
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