Open Access
Table 1
The thickness of various materials in multi-layer structures.
| Material | Geometric parameters [μm] | Material properties |
|---|---|---|
| LN | Width = 12, thickness = 0.3 | Refractive Index = 2.13902 |
| Relative permittivity = 27.9,44.3 | ||
| Relative permeability = 1 | ||
| Electrical conductivity = 0 S/m | ||
| Electro-optic coefficient r33 = 30.8 [pm/V] | ||
| SiO2 | Width = 12, thickness = 4.7 | Refractive Index = 1.4446 |
| Relative permittivity = 2.08689 | ||
| Relative permeability = 1 | ||
| Electrical conductivity = 0 S/m | ||
| Si3N4 | Width = 1, thickness = 0.3 | Refractive Index = 1.99768 |
| Relative permittivity = 3.99072 | ||
| Relative permeability = 1 | ||
| Electrical conductivity = 0 S/m | ||
| Al | Width = 1, thickness = 1 | Refractive Index = 1.44 + 16 j |
| Air | ||
| Width = 12, thickness = 5 | Refractive Index = 1.0006 | |
| Relative permittivity = 1 | ||
| Relative permeability = 1 | ||
| Electrical conductivity = 0 S/m | ||
| Si3N4-LN | Thickness = 0.05 | Heterostructure layer, with optimized interface properties |
Note: The thickness of Si3N4 (0.3 μm) and TFLN (0.3 μm) refers to the functional layer thickness of the heterogeneous integration structure. The Si3N4-LN layer with a thickness of 0.05 μm is the interface transition layer.
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