Fig. 1
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(a) Diagram of the designed grating out-coupler. (b, c) Intensity distribution of the fundamental quasi-TE mode showing the confinement in (b) a 2 × 3 μm2 Si waveguide (thick SOI platform) waveguide and (c) in a 911 nm thick SiGe layer deposited on top the same Si waveguide. (d) transmission as a function of the thickness of the SiGe layer.
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