| Issue |
J. Eur. Opt. Society-Rapid Publ.
Volume 20, Number 1, 2024
|
|
|---|---|---|
| Article Number | 23 | |
| Number of page(s) | 5 | |
| DOI | https://doi.org/10.1051/jeos/2024023 | |
| Published online | 31 May 2024 | |
Research Article
Ultra low RIN, low threshold AlGaInAs/InP BH-DFB laser
1
Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, PR China
2
Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, PR China
* Corresponding authors: hanjun@bjut.edu.cn (J. Han); tianyu.sun@hotmail.com (T. Sun).
Received:
22
March
2024
Accepted:
25
April
2024
This study presents a comparative analysis of AlGalnAs buried heterostructure laser diodes by using dual-channel ridge-waveguides. Different shaped channels, including bowl shaped groove and vertical groove, are explored. Using a vertical groove structure, we achieved an output power of 90 mW at 25 °C with a threshold current of only 4 mA. This represents a 3.6-fold increase in output power compared to the BH-DFB structure. At a high temperature of 85 °C, the laser maintains a side-mode suppression ratio of over 45 dB at the maximum power point. The laser’s relative intensity noise in the 0–40 GHz frequency range is less than −162.8 dB/Hz when operated at 300 mA with the chip butterfly packaged. These findings underscore the robustness, reliability, and high-performance capabilities of the developed DFB laser, highlighting its potential for various practical applications.
Key words: Laser / RIN / AlGaInAs / Trench
© The Author(s), published by EDP Sciences, 2024
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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