Issue |
J. Eur. Opt. Soc.-Rapid Publ.
Volume 9, 2014
|
|
---|---|---|
Article Number | 14050 | |
Number of page(s) | 6 | |
DOI | https://doi.org/10.2971/jeos.2014.14050 | |
Published online | 18 November 2014 |
Regular paper
Low loss GaN waveguides for visible light on Si substrates
1
CNRS, CRHEA UP 10, rue Bernard Gregory, 06560 VALBONNE, France
2
CEA LETI, 17 rue des Martyrs, 38054 Grenoble cedex 9, France
3
University Nice Sophia Antipolis, LPMC UMR 7336, Parc Valrose, 06108 Nice cedex 2, France
* maksym.gromovyi@crhea.cnrs.fr
** marc.de-micheli@unice.fr
Received:
7
September
2014
Revised:
22
October
2014
In this work, we present the fabrication and the characterization of an optical waveguide made of AlN and GaN layers grown by MBE on a Si(111) substrate. For the fundamental mode at 633 nm, the propagation losses are in the order of 2 dB/cm, which is a good number for SC waveguides at this wavelength. The propagation losses dramatically increase with the mode order. A careful comparison of measurements and modeling of the complete structure allows identifying the part of the losses due to absorption in the Si substrate, and showing that propagation losses could be further reduced by using well chosen SOI substrates.
Key words: GaN on silicon / GaN on SOI / waveguide losses / visible waveguide / MBE
© The Author(s) 2014. All rights reserved.
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