| Issue |
J. Eur. Opt. Soc.-Rapid Publ.
Volume 7, 2012
|
|
|---|---|---|
| Article Number | 12035 | |
| Number of page(s) | 5 | |
| DOI | https://doi.org/10.2971/jeos.2012.12035 | |
| Published online | 04 September 2012 | |
Regular papers
Microsized subsurface modification of mono-crystalline silicon via non-linear absorption
BIAS, Bremer Institut für angewandte Strahltechnik, Klagenfurter Straße 2, 28359 Bremen, Germany
Received:
31
January
2012
Revised:
30
June
2012
We introduce a novel method of optically inducing microsized subsurface structures using non-linear absorption of near infrared light in mono-crystalline silicon. We discuss the physical processes such as multi-photon absorption and self focussing in the material. The results presented in this paper demonstrate a new method of subsurface modifications in silicon and may open up novel avenues for optical devices embedded in silicon and optical process for the separation of wafers from their ingots.
Key words: Silicon / non-linear absorption / opto-mechanical processes / silicon photonics
© The Author(s) 2012. All rights reserved.
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