Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layersElena Ermilova, Matthias Weise and Andreas HertwigJ. Eur. Opt. Society-Rapid Publ., 19 1 (2023) 23DOI: https://doi.org/10.1051/jeos/2023018
