Open Access
Table 1
Etching rate under different plasma parameters.
| Etching parameters |
Etching rate (nm/min) |
|||||||
|---|---|---|---|---|---|---|---|---|
| Gas mixture | Gas flow (sccm) | Pressure (Pa) | RF Power (W) | DC Bias (V) | ICP Power (W) | h = 2 mm | h = 5 mm | h = 10 mm |
| CHF3/Ar/O2 | 50/30/10 | 0.5 | 500 | 250 | 100 | 29.4 | 32.67 | 28 |
| 205 | 300 | 74.6 | 65.8 | 41.7 | ||||
| 205 | 500 | 118 | 88.7 | 11.1 | ||||
| 160 | 1000 | 125 | 15 | 0 | ||||
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